S29GL01GS11TFI010

The S29GL01GS11TFI010 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

Артикул

S29GL01GS11TFI010

Наличие

Под заказ

Срок поставки

3–4 недели

Цена

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